The team aims to make the process that forms a gate which will control current from an electronic device unnecessary. As a result, integration with high density should be possible and it is expected that this technology will reduce cost and time to manufacture electronic devices.
“We have overcome limitations of 2D materials by utilizing static electricity.” said the team. “This technology can be applied to memory devices with ultra-high capacities, graphene transparent electrodes, and electrodes within semiconductor devices.”
Source: ETNews